SIGC109T120R3 edited by infineon technologies ai ps dd hv3, l7681a , edition 2 , 04.09.2003 igbt 3 chip this chip is used for: power module features: 1200v trench + field stop technology low turn - off losses short tail current positive temperature coefficient easy paralleling applications: drives g c e chip type v ce i cn die size package ord ering code SIGC109T120R3 1200v 100a 10.47 x 10.44 mm 2 sawn on foil q67050 - a4108 - a001 mechanical parameter: raster size 10.47 x 10.44 emitter pad size 8x(2.11 4 x 4. 391 ) gate pad size 1.139 x 1.1 39 mm area total / active 109.3 / 85.8 mm 2 thickne ss 140 m wafer size 150 mm flat position 90 grd max.possible chips per wafer 124 pcs passivation frontside photoimide emitter metallization 3200 nm alsicu collector metallization 1400 nm ni ag ? system suitable for epoxy and soft solder die bonding die bond electrically conductive glue or solder wire bond al, <500m reject ink dot size ? 0.65mm ; max 1.2mm recommended storage environment store in original container, in dry nitrogen, < 6 month at an ambient temperature of 23c
SIGC109T120R3 edited by infineon technologies ai ps dd hv3, l7681a , edition 2 , 04.09.2003 maximum ratings : parameter symbol value unit collector - emitter voltage , t j =25 c v ce 1200 v dc collector current, limited by t jmax i c 1 ) a pulsed collector current, t p limited by t jmax i cpuls 3 00 a gate emitter voltage v ge 20 v operating jun ction and storage temperature t j , t stg - 55 ... +150 c 1 ) depending on thermal properties of assembly static characteristics (tested on chip) , t j =25 c, unless otherwise specified: value parameter symbol conditions min. ty p. max. unit collector - emitter breakdown voltage v (br)ces v ge =0v , i c = 4ma 1200 collector - emitter saturation voltage v ce(sat) v ge =15v, i c =100a 1.4 1.7 2.1 gate - emitter threshold voltage v ge(th) i c =4ma , v ge =v ce 5.0 5.8 6.5 v zero gate voltage collector current i ces v ce =1200v , v ge =0v 650 a gate - emitter leakage current i ges v ce =0v , v ge =2 0v 600 na integrated gate resistor r gint 7.5 w electrical characteristics (tested at component): value parameter symbol conditions min. typ. max. unit input capacitance c iss 7210 output capacitance c oss 377 reverse transfer capacitance c rss v ce =25v, v ge =0v, f =1mhz 327 pf switching characteristics (tested at component), inductive load value parameter symbol conditions 1) min. typ. max. unit turn - on delay time t d(on) 285 rise time t r 45 turn - off delay time t d(off) 520 fall time t f t j =125 c v cc =600v, i c =100a, v ge = - 15/15v, r g = 3.9 w 90 ns 1) values also influenced by parasitic l - and c - in measurement and package.
SIGC109T120R3 edited by infineon technologies ai ps dd hv3, l7681a , edition 2 , 04.09.2003 chip drawing:
SIGC109T120R3 edited by infineon technologies ai ps dd hv3, l7681a , edition 2 , 04.09.2003 further electrical characteristics: this chip data sheet refers to the device data sheet tbd description: aql 0,65 for visual inspection according to failure catalog electrostatic discharge sensitive device according to mil - std 883 test - normen villach/prffeld published by infineon technologies ag , bereich kommunikation st. - martin - strasse 53, d - 81541 mnchen ? infineon technologies ag 2002 all rights reserved. attention please! the information herein is given to describe cert ain components and shall not be considered as warranted characteristics. terms of delivery and rights to technical change reserved. we hereby disclaim any and all warranties, including but not limited to warranties of non - infringement, regarding circuits, descriptions and charts stated herein. infineon technologies is an approved cecc manufacturer. information for further information on technology, delivery terms and conditions and prices please contact your nearest infineon technologies office in germany or our infineon technologies representatives world - wide (see address list). warnings due to technical requirements components may contain dangerous substances. for information on the types in question please contact your nearest infineon technologies offic e. infineon technologies components may only be used in life - support devices or systems with the express written approval of infineon technologies, if a failure of such components can reasonably be expected to cause the failure of that life - support device or system, or to affect the safety or effectiveness of that device or system. life support devices or systems are intended to be implanted in the human body, or to support and / or maintain and sustain and / or protect human life. if they fail, it is r easonable to assume that the health of the user or other persons may be endangered.
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